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07/08/08 irg4ph50spbf e c g n-channel to-247ac features
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)*!+,- .)/ !" #$0%%'& " #$0 1&2)2 ') ("3" #$0 v ces =1200v v ce(on) typ. = 1.47v @v ge = 15v, i c = 33a standard speed igbt i nsulated gate bipolar transistor www.irf.com 1 absolute maximum ratings parameter max. units v ces collector-to-emitter voltage v i c @ t c = 25c continuous collector current i c @ t c = 100c continuous collector current i cm pulsed collector current i lm clamped inductive load current gate-to-emitter voltage transient gate-to-emitter voltage e arv reverse voltage avalanche energy mj p d @ t c =25 maximum power dissipation p d @ t c =100 maximum power dissipation t j operating junction and t stg storage temperature range soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbfin (1.1 nm) thermal resistance parameter min. t y p. max. units r jc junction-to-case ?? 0.64 r cs case-to-sink, flat, greased surface ? 0.24 ? r ja junction-to-ambient, typical socket mount ?? 40 wt weight ? 6.0(0.21) ? g (oz) c a v w c/w v ge 1200 57 33 114 114 270 -55 to + 150 20 30 200 80 41)566*6,
irg4ph50spbf 2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 167 251 i c = 33a q ge gate - emitter charge (turn-on) ? 25 38 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) ? 55 83 v ge = 15v t d(on) turn-on delay time ? 32 ? t r rise time ? 29 ? t j = 25c t d(off) turn-off delay time ? 845 1268 i c = 33a, v cc = 960v t f fall time ? 425 638 v ge = 15v, r g = 5.0 ? e on turn-on switching loss ? 1.80 ? energy losses include "tail" e off turn-off switching loss ? 19.6 ? mj see fig. 9, 10, 14 e ts total switching loss ? 21.4 44 t d(on) turn-on delay time ? 32 ? t j = 150c, t r rise time ? 30 ? i c = 33a, v cc = 960v t d(off) turn-off delay time ? 1170 ? v ge = 15v, r g = 5.0 ? t f fall time ? 1000 ? energy losses include "tail" e ts total switching loss ? 37 ? mj see fig. 10,11,14 l e internal emitter inductance ? 13 ? nh measured 5mm from package c ies input capacitance ? 3600 ? v ge = 0v c oes output capacitance ? 160 ? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 30 ? ? = 1.0mhz parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 ? ? v v ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage 18 ? ? v v ge = 0v, i c = 1.0 a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 1.22 ? v/c v ge = 0v, i c = 2.0 ma ? 1.47 1.7 i c = 33a v ge = 15v v ce(on) collector-to-emitter saturation voltage ? 1.75 ? i c = 57a see fig.2, 5 ? 1.55 ? i c = 33a , t j = 150c v ge(th) gate threshold voltage 3.0 ? 6.0 v ce = v ge , i c = 250a dv ge(th) /dt j temperature coeff. of threshold voltage ? -11 ? mv/c v ce = v ge , i c = 250a g fe forward transconductance 27 40 ? s v ce = 100v, i c = 33a ? ? 250 v ge = 0v, v ce = 1200v ? ? 2.0 v ge = 0v, v ce = 10v, t j = 25c ? ? 1000 v ge = 0v, v ce = 1200v, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified)

switching characteristics @ t j = 25c (unless otherwise specified) pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. notes: repetitive rating; v ge = 20v, pulse width limited by max. junction temperature. ( see fig. 13b ) v cc = 80%(v ces ), v ge = 20v, l = 10h, r g = 5.0 ? , (see fig. 13a) repetitive rating; pulse width limited by maximum junction temperature.
irg4ph50spbf www.irf.com 3 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 1 10 100 1000 0.0 1.0 2.0 3.0 4.0 5.0 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 80s pulse width ge t = 150 c j t = 25 c j 1 10 100 1000 5 6 7 8 9 10 11 12 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 25 c j t = 150 c j 0 20 40 60 0.1 1 10 f, frequency (khz) load current (a) a 60% of rated voltage ideal diodes square wave: for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j power dissipation = 40w triangular wave: clamp voltage: 80% of rated
irg4ph50spbf 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 10 20 30 40 50 60 t , case temperature ( c) maximum dc collector current(a) c -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 1.5 2.0 2.5 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 66 c i = a 33 c i = a 16.5 c
irg4ph50spbf www.irf.com 5 fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature 6 ? 1 10 100 0 1000 2000 3000 4000 5000 6000 7000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res 0 25 50 75 100 125 150 175 0 5 10 15 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 33a cc c 0 10 20 30 40 50 21.0 22.0 23.0 24.0 25.0 r , gate resistance (ohm) total switching losses (mj) g v = 960v v = 15v t = 25 c i = 33a cc ge j c -60 -40 -20 0 20 40 60 80 100 120 140 160 1 10 100 1000 t , junction temperature ( c ) total switching losses (mj) j r = 5ohm v = 15v v = 960v g ge cc i = a 66 c i = a 33 c i = a 16.5 c ? ( ? )
irg4ph50spbf 6 www.irf.com fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - reverse bias soa 0 10 20 30 40 50 60 70 0 20 40 60 80 100 120 i , collector current (a) total switching losses (mj) c r = 5ohm t = 150 c v = 960v v = 15v g j cc ge 1 10 100 1000 1 10 100 1000 10000 v = 20v t = 125 c ge j o safe operating area v , collector-to-emitter voltage (v) i , collector current (a) ce c ?
irg4ph50spbf www.irf.com 7
d.u.t. 50v l v * c * driver same type as d.u.t.; vc = 80% of vce(max) * note: due to the 50v power supply, pulse width and inductor will increase to obtain rated id. 1000v - " .$- 4- -$- 480f 960v
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irg4ph50spbf 8 www.irf.com data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/2008

to-247ac package outline (dimensions are shown in milimeters (inches))
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